GaN-on-patterned-silicon (GPS) technique for fabrication of GaN-based MEMS
GaN-on-patterned-silicon (GPS) technique for fabrication of GaN-based MEMS
复制标题
用于制造基于 GaN 的 MEMS 的图案化硅上 GaN (GPS) 技术
DOI：
10.1016/j.sna.2005.11.047
复制
发表时间：
2006
影响因子：
4.6
通讯作者：
K. J. Chen
中科院分区：
文献类型：
--
作者：
Zhenchuan Yang;Ruonan Wang;Deliang Wang;Baoshun Zhang;K. Lau;K. J. Chen
提出了一种无需直接刻蚀氮化镓（GaN）的微机电系统（MEMS）用悬置氮化镓（GaN）结构的制备方法。该工艺结合了GaN在图案化硅衬底（GPS）上的选择性区域生长和随后的GaN结构下的硅的牺牲湿法蚀刻。采用各向异性和各向同性湿法刻蚀技术进行牺牲刻蚀。实验结果表明，GPS-MEMS技术可以在普通硅微加工设备上批量制作各种GaN基MEMS器件。
A method for fabricating suspended gallium nitride (GaN) structures for microelectromechanical systems (MEMS) without direct etching of GaN is demonstrated. The process combines a selective area growth of GaN-on-patterned-silicon-substrate (GPS) and a subsequent sacrificial wet etching of the silicon under the GaN structures. Both anisotropic and isotropic wet etching techniques are used to carry out the sacrificial etching. The experimental results show that the GPS–MEMS technique can be used to batch-fabricate various GaN-based MEMS devices with common silicon micromachining equipments.