3D crystal growth model for understanding the role of plasma pre‐treatment on CVD diamond crystal shape
3D crystal growth model for understanding the role of plasma pre‐treatment on CVD diamond crystal shape
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3D 晶体生长模型，用于了解等离子体预处理对 CVD 金刚石晶体形状的作用
DOI：
10.1002/pssa.200671101
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发表时间：
2006
期刊：
影响因子：
--
通讯作者：
A. Gicquel
中科院分区：
文献类型：
--
作者：
F. Silva;J. Achard;X. Bonnin;A. Michau;A. Tallaire;O. Brinza;A. Gicquel
在过去几年中，通过化学气相沉积（CVD）生长厚且高纯度的同质外延单晶金刚石所取得的进展已经在光学或电力电子等领域开辟了广泛的可能应用。最近，LIMHP在连续和脉冲模式下使用相对较高的微波功率密度生产出了生长速率接近20 µm/h的高质量单晶[1，2]。然而，这些结果是通过在使用H2/O2等离子体生长之前使用金刚石衬底的原位蚀刻来调节的。与在未经处理的衬底上生长相比，这种预处理导致同质外延金刚石层的更好和更光滑的形态[3]。此外，金刚石衬底的初始质量被证明是CVD外延膜的最终形态的关键。尽管如此，表面缺陷对初始金刚石基底的影响以及预处理对生长膜的最终形态的作用仍然部分不清楚。实际上，在未处理的衬底上的金刚石同质外延生长导致晶体的意想不到的形态和几何形状。为了解释这些观察结果，已经开发了一个3D纯几何生长模型，包括（100）、（111）以及（110）和（113）面的生长速率。该模型提供了一个一致的解释基板预处理对晶体的生长和形态的影响。（© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA，魏因海姆）
The progress that has been achieved over the past few years on the growth of thick and high purity homo‐epitaxial single crystal diamond by chemical vapour deposition (CVD) has opened a wide range of possible applications in areas such as optics or power electronics. Recently, high quality single crystals were produced at LIMHP with growth rates close to 20 µm/h using relatively high microwave power density, both in continuous and pulsed mode [1, 2]. However, these results are conditioned by the use of an in‐situ etching of the diamond substrate prior to growth using a H2/O2 plasma. This pre‐treatment results in better and smoother morphologies of the homoepitaxial diamond layer [3] compared to growth on an untreated substrate. Moreover, the initial quality of the diamond substrate was demonstrated to be critical for the final morphology of the CVD epitaxial film. Still, the impact of surface defects on the initial diamond substrate and the role of the pre‐treatment on the final morphology of the grown film remained partially unclear. Indeed, diamond homoepitaxial growth on untreated substrates leads to unexpected morphology and geometry of the crystal. To explain these observations, a 3D purely geometrical growth model has been developed, involving the growth rate of (100), (111), as well as (110) and (113) faces. The model provi‐ des a consistent explanation of the substrate pre‐treatment effect on the growth and morphology of the crystal. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)