Improved resistive switching reliability by using dual-layer nanoporous carbon structure
Improved resistive switching reliability by using dual-layer nanoporous carbon structure
复制标题
DOI：
10.1063/1.5003331
复制
发表时间：
2017-10
影响因子：
4
通讯作者：
Ye Tao;Xuhong Li;Zhongqiang Wang;Haiyang Xu;Wentao Ding;Jiangang Ma;Yichun Liu
中科院分区：
文献类型：
--
作者：
Ye Tao;Xuhong Li;Zhongqiang Wang;Haiyang Xu;Wentao Ding;Jiangang Ma;Yichun Liu
为了提高铜/纳米多孔非晶碳（a-C）/铂存储器件的开关可靠性，我们优化了预成型导电丝（CF）的直径和微几何结构。由于在铜电极蒸发过程中将预形成的CF引入到纳米多孔层中，因此获得了无成形器件。在一定范围内，随着预制碳纤维尺寸的增大，开关波动减小;然而，具有较强预制碳纤维的器件在第一次击穿过程中遭受高电流。此外，为了实现高开关均匀性和低功耗，提出了一种双层结构来调节预制CF的微几何形状。与原始器件和单层纳米多孔器件相比，高/低电阻值的波动分别被进一步抑制到26%和21%。此外，电阻式随机存取存储器（RRAM）器件具有快速的开关速度（105个周期），...
We optimized the diameter and microgeometry of preformed conductive filaments (CFs) to improve the switching reliability of copper/nanoporous amorphous carbon (a-C)/platinum memory devices. Forming-free devices were obtained because of the introduction of preformed CFs into the nanoporous layer during the copper electrode evaporation process. The switching fluctuation decreased with the increasing preformed CF size in a certain range; however, the device with stronger preformed CFs suffered from high current in the first RESET process. Furthermore, to achieve both high switching uniformity and low power consumption, a dual-layer structure was proposed to regulate the microgeometry of preformed CFs. Compared with those of a pristine device and single-layer nanoporous device, the fluctuation of high/low resistance values was further suppressed to 26% and 21%, respectively. In addition, Resistive random access memory (RRAM) devices exhibited a fast switching speed ( 105 cycles),...