Phosphorene: An Unexplored 2D Semiconductor with a High Hole
Phosphorene: An Unexplored 2D Semiconductor with a High Hole
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发表时间：
2014
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通讯作者：
Mobility Liu;A. Neal;Zhen Zhu;Zhe Luo;Xianfan Xu;D. Tománek;P. Ye
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作者：
Mobility Liu;A. Neal;Zhen Zhu;Zhe Luo;Xianfan Xu;D. Tománek;P. Ye
我们介绍了层状黑磷的二维对应物，我们称之为磷烯，作为一种未开发的p型半导体材料。与石墨烯和MoS 2一样，单层磷烯是柔性的，可以机械剥离。我们发现磷烯是稳定的，而且不像石墨烯，它有一个固有的、直接的、可测量的带隙。我们的从头计算结果表明，带隙是直接的，依赖于层的厚度和层内应变，并显着大于体值0.31 - 0.36 eV。在可见光范围内观察到的单层磷烯的光致发光峰证实了带隙大于体系统的带隙。在室温下，沟道长度为1.0 μm的磷烯场效应晶体管具有高达194 mA/mm的高导通电流，高达286 cm 2 /V3 s的高空穴场效应迁移率，以及高达104的通断比。通过构建由磷烯PMOS和MoS 2 NMOS晶体管组成的二维CMOS反相器，我们证明了磷烯集成的可能性。
We introduce the 2D counterpart of layered black phosphorus, which we call phosphorene, as an unexplored p-type semiconducting material. Same as graphene and MoS2, single-layer phosphorene is flexible and can be mechanically exfoliated. We find phosphorenetobestableand,unlikegraphene,tohaveaninherent, direct, and appreciable band gap. Our ab initio calculations indicate thatthebandgapisdirect,dependsonthenumberoflayersandthe in-layer strain, and is significantly larger than the bulk value of 0.31� 0.36 eV. The observed photoluminescence peak of single-layer phosphorene in the visible optical range confirms that the band gap is larger than that of the bulk system. Our transport studies indicate a hole mobility that reflects the structuralanisotropyofphosphoreneandcomplementsn-typeMoS2.Atroomtemperature,ourfew-layerphosphorene field-effecttransistorswith1.0 μm channellengthdisplayahighon-currentof194mA/mm,ahighhole field-effectmobilityof286cm 2 /V 3 s,andanon/offratioofupto10 4 .Wedemonstrate the possibility of phosphorene integration by constructing a 2D CMOS inverter consisting of phosphorene PMOS and MoS2 NMOS transistors.