Controlling the diameter, growth rate, and density of vertically aligned carbon nanotubes synthesized by microwave plasma-enhanced chemical vapor deposition
Controlling the diameter, growth rate, and density of vertically aligned carbon nanotubes synthesized by microwave plasma-enhanced chemical vapor deposition
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DOI：
10.1063/1.126348
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发表时间：
2000-04-24
影响因子：
4
通讯作者：
Kim, JM
中科院分区：
文献类型：
--
作者：
Choi, YC;Shin, YM;Kim, JM
采用微波等离子体增强化学气相沉积技术在镍沉积硅衬底上制备了垂直排列的碳纳米管。在射频磁控溅射过程中，Ni薄膜的晶粒度随射频功率密度的变化而变化。我们发现，碳纳米管的直径、生长速度和密度可以由镍薄膜的颗粒尺寸来系统地控制。随着镍薄膜颗粒尺寸的减小，纳米管的直径减小，而生长速率和密度增大。高分辨率的电子显微镜图像清楚地表明，合成的纳米管是多壁的。(C)2000年美国物理研究所。[S0003-6951(00)05317-1]。
Vertically aligned carbon nanotubes were synthesized on Ni-deposited Si substrates using microwave plasma-enhanced chemical vapor deposition. The grain size of Ni thin films varied with the rf power density during the rf magnetron sputtering process. We found that the diameter, growth rate, and density of carbon nanotubes could be controlled systematically by the grain size of Ni thin films. With decreasing the grain size of Ni thin films, the diameter of the nanotubes decreased, whereas the growth rate and density increased. High-resolution transmission electron microscope images clearly demonstrated synthesized nanotubes to be multiwalled. (C) 2000 American Institute of Physics. [S0003-6951(00)05317-1].