Ion irradiation and implantation modifications of magneto-ionically induced exchange bias in Gd/NiCoO
Ion irradiation and implantation modifications of magneto-ionically induced exchange bias in Gd/NiCoO
复制标题
Gd/NiCoO 中磁离子感应交换偏压的离子辐照和注入改性
DOI：
10.1016/j.jmmm.2021.168479
复制
发表时间：
2021
影响因子：
2.7
通讯作者：
Liu, Kai
中科院分区：
文献类型：
--
作者：
Jensen, Christopher J.;Quintana, Alberto;Sall, Mamour;Diez, Liza Herrera;Zhang, Junwei;Zhang, Xixiang;Ravelosona, Dafiné;Liu, Kai
通过离子迁移对磁性的磁离子控制在实现节能自旋电子器件的新功能方面显示出了希望。在这项工作中，我们证明了氦离子辐照和氧注入对Gd/Ni0.33Co0.67O异质结构中磁离子诱导交换偏置效应的影响。He+辐照导致Ni0.33Co0.67O晶格因应变松弛而膨胀。在低He+通量（≤2 × 1014ions cm−2）下，氧化还原诱导的界面磁矩最初增加，这是由于氧迁移增强。在较高的影响下，由于钉住的未补偿界面ni0.33 co0.67自旋的减少，交换偏置被抑制。对于氧注入样品，在5 × 1015cm−2剂量以下的初始晶格膨胀随后在更高剂量下被晶格收缩和相偏析控制，从而改变交换偏置。这些结果突出了离子辐照和注入作为一种有效手段来定制磁离子效应的可能性。
Magneto-ionic control of magnetic properties through ionic migration has shown promise in enabling new functionalities in energy-efficient spintronic devices. In this work, we demonstrate the effect of helium ion irradiation and oxygen implantation on magneto-ionically induced exchange bias effect in Gd/Ni0.33Co0.67O heterostructures. Irradiation using He+leads to an expansion of the Ni0.33Co0.67O lattice due to strain relaxation. At low He+fluence (≤2 × 1014ions cm−2), the redox-induced interfacial magnetic moment initially increases, owing to enhanced oxygen migration. At higher fluence, the exchange bias is suppressed due to reduction of pinned uncompensated interfacial Ni0.33Co0.67O spins. For oxygen implanted samples, an initial lattice expansion below a dose of 5 × 1015cm−2is subsequently dominated at higher dose by a lattice contraction and phase segregation into NiO and CoO-rich phases, which in turn alters the exchange bias. These results highlight the possibility of ion irradiation and implantation as an effective means to tailor magneto-ionic effects.