Etch rate control in a 27 MHz reactive ion etching system for ultralarge scale integrated circuit processing
Etch rate control in a 27 MHz reactive ion etching system for ultralarge scale integrated circuit processing
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用于超大规模集成电路处理的 27 MHz 反应离子蚀刻系统中的蚀刻速率控制
DOI：
10.1116/1.582102
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发表时间：
1999
期刊：
影响因子：
--
通讯作者：
M. Sekine
中科院分区：
文献类型：
--
作者：
T. Tatsumi;Y. Hikosaka;S. Morishita;M. Matsui;M. Sekine
研究了 27 MHz 反应离子刻蚀系统中 SiO2、光刻胶、Si 和 SiN 在 6×1016 cm−2 s−1 恒定离子通量和 1450 V 离子能量下的刻蚀速率。 CF2 和 CF+ 的典型入射通量密度分别约为 1017 和 1016 cm−2 s−1。 SiO2 蚀刻速率由总离子通量提供的能量与自由基和离子提供的 C-F 活性物质的量的平衡决定。当我们粗略地假设F、CF、CF2和CF3的表面反应概率为0.1、0.1、0.1和0.5时，SiO2蚀刻速率可以很好地表达为净自由基通量中F总数的函数。然而，为了澄清包括自由基和离子在内的主要通量，必须对实际蚀刻表面上的表面反应概率进行进一步研究，因为入射通量强烈依赖于表面反应概率的这些常数。降低总离子通量或离子能量会降低 SiO2 的蚀刻速率。更高的离子通量...
The etch rates of SiO2, photoresist, Si, and SiN in a 27 MHz reactive ion etching system at constant ion flux of 6×1016 cm−2 s−1 and ion energy of 1450 V were studied. Typical incident flux densities of CF2 and CF+ were on the order of 1017 and 1016 cm−2 s−1, respectively. The SiO2 etch rate was determined by the balance of the energy supplied by the total ion flux and the amount of the C–F reactive species supplied by radicals and ions. When we roughly assumed the surface reaction probabilities of F, CF, CF2 and CF3 to be 0.1, 0.1, 0.1, and 0.5, the SiO2 etch rate could be expressed well as a function of the total number of F in the net radical fluxes. To clarify the dominant flux including radicals and ions, however, further research on surface reaction probabilities on the actual etched surface must be conducted because the incident fluxes strongly depend on these constants of the surface reaction probability. Lowering the total ion flux or ion energy decreased the etch rate of SiO2. A higher ion flux ...