Control of Spin Precession in a Spin-Injected Field Effect Transistor
Control of Spin Precession in a Spin-Injected Field Effect Transistor
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DOI：
10.1126/science.1173667
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发表时间：
2009-09-18
期刊：
影响因子：
56.9
通讯作者：
Johnson, Mark
中科院分区：
文献类型：
--
作者：
Koo, Hyun Cheol;Kwon, Jae Hyun;Johnson, Mark
自旋电子学在寻求克服传统电子学的一些局限性的同时，增加了信息处理的功能。自旋注入场效应晶体管是一种具有两个铁磁电极的横向半导体沟道，是自旋电子学研究的基础。我们在高迁移率的InAs异质结中演示了一种自旋注入场效应晶体管，并对弹道自旋极化电子进行了电子注入和探测。我们观察到了沟道电导作为单调增加栅压的函数，并与理论进行了拟合。
Spintronics increases the functionality of information processing while seeking to overcome some of the limitations of conventional electronics. The spin-injected field effect transistor, a lateral semiconducting channel with two ferromagnetic electrodes, lies at the foundation of spintronics research. We demonstrated a spin-injected field effect transistor in a high-mobility InAs heterostructure with empirically calibrated electrical injection and detection of ballistic spin-polarized electrons. We observed and fit to theory an oscillatory channel conductance as a function of monotonically increasing gate voltage.