Chemical mechanical polishing of titanium with colloidal silica containing hydrogen peroxide - mirror polishing and surface properties
Chemical mechanical polishing of titanium with colloidal silica containing hydrogen peroxide - mirror polishing and surface properties
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DOI：
10.4012/dmj.28.68
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发表时间：
2009-01-01
影响因子：
2.5
通讯作者：
Watanabe, Kouichi
中科院分区：
文献类型：
--
作者：
Okawa, Seigo;Watanabe, Kouichi
用酸性和碱性胶体二氧化硅（H_2O_2含量达3wt%）对cpTi（Ti）进行化学机械抛光（CMP），获得了平整的镜面抛光表面，没有任何污染层和反应层。利用AFM、EPMA和XPS研究了抛光行为和表面性质。碱性抛光液抛光钛的失重大于酸性抛光液，含3wt%H_2O_2的碱性抛光液抛光钛的表面粗糙度小于2 μ mRMS。此外，三种化学物种，OH（-），O（2-），和H（2）O，被检测到的Ti表面CMP使用这些浆料。本研究的结果表明，CMP使用胶体二氧化硅含有H（2）O（2）成功地创建了镜面抛光表面没有污染和反应层。
Chemical mechanical polishing (CMP) of cpTi (Ti) was carried out Using two types of slurries, acidic and basic colloidal silica containing H(2)O(2) UP to 3 wt%, to obtain flat and mirror-polished surfaces without any contaminated and reacted layers. Polishing behavior and surface properties were investigated using AFM, EPMA, and XPS. Weight loss of Ti polished by CMP Using the basic slurry was larger than that using the acidic one, and surface roughness was less than 2 Urn RMS when basic slurry containing 3 wt% H(2)O(2) was used. Moreover, three kinds of chemical species, OH(-), O(2-), and H(2)O, were detected on the Ti surfaces polished by CMP using these slurries. Results of this study showed that CMP using colloidal silica containing H(2)O(2) successfully created a mirror-polished surface without contaminated and reacted layers.