Impact of contact resistance on memory window in phase-change random access memory (PCRAM)
Impact of contact resistance on memory window in phase-change random access memory (PCRAM)
复制标题
接触电阻对相变随机存取存储器 (PCRAM) 存储窗口的影响
DOI：
10.1007/s10825-016-0905-3
复制
发表时间：
2016
影响因子：
2.1
通讯作者：
Y.H. Song
中科院分区：
文献类型：
--
作者：
J.S. An;C.M. Choi;S. Shindo;Y. Sutou;Y.W. Kwon;Y.H. Song
本文研究了接触电阻对使用（GST）的相变随机存取存储器（PCRAM）存储窗口的影响。我们讨论的接触电阻的增加，作为设备按比例缩小到纳米尺寸和接触电阻率的变化相对于设置和复位状态之间的电阻窗口的影响。在的接触面积中，置位状态下的接触电阻占总电阻的80%以上，并且所占面积随着接触面积的增大而增大。由于接触电阻的增加，存储器窗口随着置位电阻的增加而显著退化。为了保持存储器窗口具有大于两个数量级的aarea中的电阻，应当通过减小接触电阻率或通过一些其它方法将接触电阻减小到aarea的接触电阻的60%以下。我们研究通过采用三维接触结构实现的接触电阻的减少，我们提出这种结构作为候选人的缩放PCRAM。
This paper investigates the impact of contact resistance on the memory window in phase-change random access memories (PCRAMs) using(GST). We discuss the increase of contact resistance, as device is scaled down to a nanometer size and the effects of contact resistivity changes with respect to the resistance window between the set and reset states. In a contact area of, the contact resistance in the set state occupies more than 80 % of the total resistance, and the occupied area increases as the contact area is scaled upward. The memory window is significantly degraded as the set resistance increases because of the increasing contact resistance. To maintain the memory window with more than two orders of magnitude of the resistance in aarea, the contact resistance should be decreased to less than 60 % of that of aarea by reducing contact resistivity or by some other method. We examine the reduction of contact resistance achieved by adopting a three-dimensional contact structure, and we propose this structure as a candidate for the scaled PCRAM.