Development of residual stress in sol-gel derived Pb(Zr,Ti)O3 films: An experimental study
Development of residual stress in sol-gel derived Pb(Zr,Ti)O3 films: An experimental study
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DOI：
10.1063/1.2890142
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发表时间：
2008-04
影响因子：
3.2
通讯作者：
S. Ćorković;R. Whatmore;Qi Zhang
中科院分区：
文献类型：
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作者：
S. Ćorković;R. Whatmore;Qi Zhang
在热处理时金属有机凝胶转变为金属氧化物的过程中，以及由于冷却过程中Pb（ZrO 2，Ti 1 −x）O3（PZT）膜和衬底材料之间的热和弹性失配，在溶胶-凝胶衍生的铁电薄膜中产生残余应力。在这项研究中，残余应力的测定后，多层PZT薄膜的沉积在镀铂（100）硅晶片的晶片曲率的方法。多层模型的应力分析被用来计算在PZT薄膜的三种不同的组合物：x=0.4，x=0.52，和x=0.6的残余应力。取向相关的残余应力中发现的组合物中含有的tetrahydroxide相，与x=0.4和x=0.52。在Pb（Zr0.4Ti0.6）O3（PZT 40 scin 60）中发现低压应力或低张应力取决于（100）取向畴的分数。结果表明，在纯菱面体结构（PZT 60 ~ 40）的PZT薄膜中存在较高的残余应力，而在纯菱面体结构（PZT 60 ~ 40）的PZT薄膜中存在较高的残余应力。
Residual stresses develop in the sol-gel-derived ferroelectric thin films during the transformation of the metal-organic gel to the metal oxide upon thermal treatment and due to the thermal and elastic mismatch between the Pb(Zrx,Ti1−x)O3 (PZT) film and the substrate materials during cooling. In this study, residual stresses were determined using the wafer curvature method after the deposition of multilayer PZT film on platinized (100) silicon wafers. A multilayer model for stress analysis was used to calculate the residual stress in PZT films of three different compositions: x=0.4, x=0.52, and x=0.6. Orientation dependent residual stresses were found in compositions containing the tetragonal phase, with x=0.4 and x=0.52. Depending on the fraction of (100) orientated domains low compressive or low tensile stress was found in Pb(Zr0.4Ti0.6)O3 (PZT 40∕60). Higher residual stress was found in PZT films consisting of only rhombohedral crystallographic structure (PZT 60∕40) while the residual stress in PZT fil...