Induced magnetic anisotropy in lifted (Ga,Mn)As thin films
Induced magnetic anisotropy in lifted (Ga,Mn)As thin films
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DOI：
10.1063/1.3597301
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发表时间：
2011-06
影响因子：
4
通讯作者：
F. Greullet;L. Ebel;F. Münzhuber;S. Mark;G. Astakhov;T. Kießling;C. Schumacher;C. Gould;K. Brunner;W. Ossau;L. Molenkamp
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文献类型：
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作者：
F. Greullet;L. Ebel;F. Münzhuber;S. Mark;G. Astakhov;T. Kießling;C. Schumacher;C. Gould;K. Brunner;W. Ossau;L. Molenkamp
我们证明了释放的能力，在（Ga，Mn）As层和（In，Ga）As/（Ga，Mn）As双层的生长诱导的应变解除他们从GaAs衬底。然后将提升的（双）层沉积回各种衬底上。通过X射线衍射研究了加工前后应变的变化。磁性表征证明了我们的剥离过程的效率，重新定向的磁化方向垂直于层平面。
We demonstrate the ability to release the growth-induced strain in (Ga,Mn)As layers and (In,Ga)As/(Ga,Mn)As bilayers by lifting them from the GaAs substrate. The lifted (bi)layers are then deposited back onto various substrates. The change in strain before and after processing has been studied by means of x-ray diffraction. Magnetic characterization demonstrates the efficiency of our lift-off process to reorient the magnetization to the direction normal to the layer plane.