RF Linearity Potential of Carbon-Nanotube Transistors Versus MOSFETs
RF Linearity Potential of Carbon-Nanotube Transistors Versus MOSFETs
复制标题
碳纳米管晶体管与 MOSFET 的射频线性潜力
DOI：
10.1109/tnano.2013.2248019
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发表时间：
2013
影响因子：
2.4
通讯作者：
M. Vaidyanathan
中科院分区：
文献类型：
--
作者：
A. Alam;C. M. Rogers;N. Paydavosi;K. Holland;S. Ahmed;M. Vaidyanathan
碳纳米管场效应晶体管（CNFET）是新兴射频应用的候选者之一，最近已将改善的线性度确定为它们可能提供的性能优势之一。在本文中，改进的线性度的潜力已被调查，考虑基于阵列的设备结构下的最佳情况下的弹道运输。弹道场效应晶体管的非线性等效电路被用来比较CNFET的线性度，传统的MOSFET。我们表明，在高频率下工作的纳米管器件并不是固有的线性，最近在文献中建议，CNFET表现出整体的线性度，是可比的MOSFET同行。非线性量子电容被认为是CNFET高频非线性的主要来源。器件参数，如氧化物电容，沟道宽度，和管间距的影响也进行了研究。
Carbon-nanotube, field-effect transistors (CNFETs) are among the candidates for emerging radio-frequency applications, and improved linearity has recently been identified as one of the performance advantages they might offer. In this paper, the potential for improved linearity has been investigated by considering an array-based device structure under the best-case scenario of ballistic transport. A nonlinear equivalent circuit for ballistic field-effect transistors is used to compare the linearity of CNFETs to conventional MOSFETs. We show that nanotube devices working at high frequencies are not inherently linear, as recently suggested in the literature, and that CNFETs exhibit overall linearity that is comparable to their MOSFET counterparts. The nonlinear quantum capacitance is identified to be a major source of high-frequency nonlinearity in CNFETs. The impacts of device parameters such as oxide capacitance, channel width, and tube pitch are also investigated.