Hydrogen-induced transport properties of holes in diamond surface layers
Hydrogen-induced transport properties of holes in diamond surface layers
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DOI：
10.1063/1.1429756
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发表时间：
2001-12-31
影响因子：
4
通讯作者：
Jackman, R
中科院分区：
文献类型：
--
作者：
Nebel, CE;Sauerer, C;Jackman, R
在0.34-350K温度范围内，通过电导和霍尔实验研究了三种不同表面粗糙度和表面形貌的端氢金刚石。在临界温度T(C)以上(20K小于或等于tot(C)小于或等于70K)，片状空穴密度随温度变化很小，低于T(C)时载流子冻结。空穴的迁移率在T(C)处表现出最小值，随着温度的升高，空穴的迁移率明显增大，温度达到400cm2/V时，空穴的迁移率更大。引入了一个输运模型，空穴在价带中传播，在价带中存在无序诱导的局域态尾部。(C)2001年美国物理研究所。
Three hydrogen-terminated diamonds with different surface roughness and morphologies have been investigated by conductivity and Hall experiments in the temperature regime 0.34-350 K. The sheet hole densities are weakly temperature dependent above a critical temperature T(c) (20 K less than or equal toT(c)less than or equal to 70 K), below T(c) carriers freeze out. The mobilities of holes show a minimum at T(c) increasing towards higher and even stronger towards lower temperatures significantly up to 400 cm2/V s. A transport model is introduced where holes propagate in the valence band where a disorder-induced tail of localized states is present. (C) 2001 American Institute of Physics.