Sb-doped crystallization of densified precursor for n-type polycrystalline Ge on an insulator with high carrier mobility
Sb-doped crystallization of densified precursor for n-type polycrystalline Ge on an insulator with high carrier mobility
复制标题
DOI：
10.1063/1.5084191
复制
发表时间：
2019-02-25
影响因子：
4
通讯作者：
Toko, K.
中科院分区：
文献类型：
--
作者：
Takahara, D.;Moto, K.;Toko, K.
绝缘体上低温合成多晶Ge是实现Ge-CMOS集成的关键技术。然而，由于多晶锗中的缺陷诱导受体，多晶锗一直保持天然的高度p型，因此难以对多晶锗中的费米能级进行控制。我们研究了使用先进的固相结晶技术与Sb掺杂的致密前体的n型多晶锗（厚度：100-500 nm）的形成。Sb掺杂的数量级为10（20）cm（-3）促进横向生长，而不是成核的Ge，导致在低生长温度（375 ℃）下超过15 μ m的大晶粒。随后的热处理（500摄氏度）提供了最高的电子迁移率（200 cm（2）/V s）和最低的电子密度（5 × 10（17）cm（-3）之间的n型多晶硅锗直接生长在绝缘体。这些发现将为高性能Ge-CMOS单片集成到Si-LSI和平板显示器中提供一种方法。由AIP Publishing授权出版。
Low-temperature synthesis of polycrystalline (poly-) Ge on insulators is a key technology to integrate Ge-CMOS into existing devices. However, Fermi level control in poly-Ge has been difficult because poly-Ge has remained naturally highly p-type due to its defect-induced acceptors. We investigated the formation of n-type poly-Ge (thickness: 100-500 nm) using the advanced solid-phase crystallization technique with Sb-doped densified precursors. Sb doping on the order of 10(20) cm(-3) facilitated lateral growth rather than nucleation in Ge, resulting in large grains exceeding 15 mu m at a low growth temperature (375 degrees C). The subsequent heat treatment (500 degrees C) provided the highest electron mobility (200 cm(2)/V s) and the lowest electron density (5 x 10(17) cm(-3)) among n-type poly-Ge directly grown on insulators. These findings will provide a means for the monolithic integration of high-performance Ge-CMOS into Si-LSIs and flat-panel displays. Published under license by AIP Publishing.