Surface blistering of ion irradiated SiC studied by grazing incidence electron microscopy
Surface blistering of ion irradiated SiC studied by grazing incidence electron microscopy
复制标题
DOI：
10.1016/s0022-3115(02)01271-0
复制
发表时间：
2002-12
影响因子：
3.1
通讯作者：
S. Igarashi;S. Muto;T. Tanabe
中科院分区：
文献类型：
--
作者：
S. Igarashi;S. Muto;T. Tanabe
利用掠入射电子显微镜和电子能量损失谱对He+和H+离子辐照SiC晶体表面的气泡进行了结构分析。气泡的形状与在硅作为靶中观察到的形状相似，但H-气泡的临界注量和皮肤结构与硅中的那些有很大不同，而He-气泡的特征与硅的情况非常相似。硅和碳化硅之间的差异可以用Si-Si、Si-C、Si-H和C-H结合能的差异来初步解释。
We present the structural analysis of surface blisters on SiC crystals heavily irradiated by He+and H+ions using grazing incidence electron microscopy and electron energy-loss spectroscopy. The shapes of the blisters were similar to those observed in silicon as the target, but the critical fluence and skin structure of the H-blisters were considerably different from those in silicon, while the He-blisters had features very similar to the case of silicon. The differences between silicon and SiC can be tentatively explained by the differences of binding energies of Si–Si, Si–C, Si–H and C–H.