Accelerated Stress Tests and Statistical Reliability Analysis of Metal-Oxide/GaN Nanostructured Sensor Devices
Accelerated Stress Tests and Statistical Reliability Analysis of Metal-Oxide/GaN Nanostructured Sensor Devices
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DOI：
10.1109/tdmr.2020.3028786
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发表时间：
2020-12-01
影响因子：
2
通讯作者：
Rao, Mulpuri V.
中科院分区：
文献类型：
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作者：
Khan, Md Ashfaque Hossain;Debnath, Ratan;Rao, Mulpuri V.
在这项工作中，传感器芯片/工艺和金属氧化物/GaN纳米晶基气体传感器的封装可靠性进行了研究的第一次，使用行业标准的加速寿命测试，如高温工作寿命，高温存储寿命，温度循环测试和高加速应力测试。在这项研究中用于感测乙醇暴露的金属氧化物功能化是ZnO。对于所有测试，样品ZnO/GaN器件在室温（20摄氏度）下暴露于干燥空气中的500 ppm乙醇，以观察和记录信噪比（SNR）随应力时间和热循环次数而变的劣化。尽管在任何进行的测试中没有观察到完全的装置失效，但是由于应力增加，气体感测响应保持逐渐降低。传感器响应的降低被认为是由于受体ZnO的逐渐相变和基线电阻增加。详细讨论了传感器失效率和寿命的估算方法。使用统计数据从执行加速应力测试，卡方分布已被实施来预测GaN纳米结构传感器器件的故障率和寿命。本研究中受应力器械的平均失效时间（MTTF）约为4年。
In this work, sensor die/process and packaging reliabilities of metal-oxide/GaN nanowire-based gas sensors have been studied for the first time, using industry standard accelerated lifetime tests, such as- High Temperature Operating Life, High Temperature Storage Life, Temperature Cycling Test and Highly Accelerated Stress Test. The metal-oxide functionalization used for sensing ethanol exposure in this study is ZnO. For all the tests, sample ZnO/GaN devices have been exposed to 500 ppm of ethanol in dry air at room temperature (20 degrees C) to observe and record the degradation of signal to noise ratio (SNR) as a function of stress time and number of thermal cycles. Although no complete device failure was observed in any of the performed tests, gas sensing response kept decreasing gradually due to increasing stress. The lowering of the sensor response is believed to be due to gradual phase transformation of the receptor ZnO and baseline resistance increase. The method for estimating failure rate and lifetime of sensor devices has been discussed in detail. Using statistical data from the performed accelerated stress tests, chi-square distribution has been implemented to predict the failure rate and lifetime of GaN nanostructured sensor devices. The mean-time-to-failure (MTTF) of the stressed devices of this study is about 4 years.