The effect of substrate clamping on the paraelectric to antiferroelectric phase transition in Nd-doped BiFeO 3 thin films

The effect of substrate clamping on the paraelectric to antiferroelectric phase transition in Nd-doped BiFeO 3 thin films
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衬底钳位对 Nd 掺杂 BiFeO 3 薄膜顺电到反铁电相变的影响

DOI:
10.1016/j.tsf.2016.10.004
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发表时间:
2016
期刊:
影响因子:
2.1
通讯作者:
Reaney, I.M.
Reaney, I.M.
中科院分区:
材料科学3区
文献类型:
--
作者:
Zhang, H.R.;Kalantari, K.;Marincel, D.M.;Trolier-McKinstry, S.;MacLaren, I.;Ramasse, Q.M.;Rainforth, W.M.;Reaney, I.M.

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