Via Resistance Reduction in Advanced Copper Interconnects
Via Resistance Reduction in Advanced Copper Interconnects
复制标题
先进铜互连中的通孔电阻降低
DOI：
10.1109/led.2017.2756820
复制
发表时间：
2017
影响因子：
4.9
通讯作者：
Griselda Bonilla
中科院分区：
文献类型：
--
作者：
C. Yang;T. Standaert;Huai Huang;M. Ali;G. Lian;Daniel C. Edelstein;Griselda Bonilla
在纯Ta衬里沉积之前，通过预衬里介电氮化工艺实现了Cu互连中的通阻降低。在常规尾管堆中，用Ta代替TaN可以减少Cu通过电阻，而氮化处理可以保持互连的完整性和可靠性。对预衬里介质氮化工艺进行了包括附着力测试、参数测量和电迁移评估在内的综合评估，以确认在先进节点Cu/超低k后端互连中降低通孔电阻的可行性。
Via resistance reduction in Cu interconnects was achieved through a pre-liner dielectric nitridation process prior to pure Ta liner deposition. Replacing TaN with Ta in the conventional liner stack reduces Cu via resistance, while the nitridation treatment maintains the interconnect integrity and reliability. Comprehensive evaluations including adhesion tests, parametric measurements, and electromigration evaluations of the pre-liner dielectric nitridation process were carried out to confirm the feasibility of reducing via resistance in advanced-node Cu/ultralow-k back-end-of-the-line interconnects.