Direct Observations of Correlation between Si-2p Components and Surface States on Si(110)-16 x 2 Single-Domain Surface Using Si-L23VV Auger-Electron and Si-2p Photoelectron Coincidence Measurements
Direct Observations of Correlation between Si-2p Components and Surface States on Si(110)-16 x 2 Single-Domain Surface Using Si-L23VV Auger-Electron and Si-2p Photoelectron Coincidence Measurements
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DOI：
10.7566/jpsj.86.054704
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发表时间：
2017-05-15
影响因子：
1.7
通讯作者：
Mase, Kazuhiko
中科院分区：
文献类型：
--
作者：
Kakiuchi, Takuhiro;Yoshizaki, Yuya;Mase, Kazuhiko
利用Si-L23VV-Si-2p光电子重合谱（Si-L23VV-Si-2p APECS）和Si-2p光电子-Si-L23VV奥格-电子重合谱（Si-2p-Si-L23VV PEACS）对Si(110)-16 x 2单畴（SD）表面进行了选择性的研究。Si(110)-16 x 2sd由5个Si-2p表面组分（SC1-SC5）和4个半导体表面态（S-1-S-4）组成。与SC3、SC4和SC5的Si-2p（1/2）光电子重合的Si(110)-16 x 2 SD的Si- l2v -Si-2p(1/2) APECS谱在高俄歇电子动能（AeKE）区显示出两个小肩。这些肩部表明俄歇过程涉及表面状态S-1和S-3。在俄歇电子下测量的Si-2p-Si-L23VV PEACS光谱中，相对于Si-L23VV峰，AeKE为+5.0 eV时，SC3、SC4和SC5 Si-2p组分的谱权大大增强。另一方面，在Si-2p- si - l23vv PEACS光谱中，SC1和SC2 Si-2p组分的谱权值在相对AeKE为+3 eV时出现最大值。这些结果直接支持了Sakamoto等人提出的Si(110)-16 x 2 SD的原子屈曲模型中5个表面组分（SC1-SC5）和4个表面态（S-1-S-4）之间的相关性。
A Si(110)-16 x 2 single-domain (SD) surface is investigated in a site-selective way using Si L23VV Auger-electron Si-2p photoelectron coincidence spectroscopy (Si-L23VV-Si-2p APECS) and Si-2p photoelectron Si-L23VV Auger-electron coincidence spectroscopy (Si-2p-Si-L23VV PEACS). The Si(110)-16 x 2 SD consists of five Si-2p surface components (SC1-SC5) and has four semiconducting surface states (S-1-S-4). The Si-L2VV-Si-2p(1/2) APECS spectrum of the Si(110)-16 x 2 SD measured in coincidence with Si-2p(1/2) photoelectrons of SC3, SC4, and SC5 shows two small shoulders in the higher Auger electron kinetic energy (AeKE) region. These shoulders suggest Auger processes involving the surface states S-1 and S-3. The spectral weights of SC3, SC4, and SC5 Si-2p components are greatly enhanced in the Si-2p-Si-L23VV PEACS spectrum measured at Auger electrons with an AeKE of +5.0 eV relative to the Si L23VV peak. On the other hand, the spectral weights of SC1 and SC2 Si-2p components in the Si-2p-Si-L23VV PEACS spectrum show a maximum peak at a relative AeKE of +3 eV. These results directly support the correlations between the five surface components (SC1-SC5) and four surface states (S-1-S-4) in the adatom-buckling model for the Si(110)-16 x 2 SD proposed by Sakamoto et al.