A Piezoresistive Silicon Accelerometer With Monolithically Integrated CMOS-circuitry

A Piezoresistive Silicon Accelerometer With Monolithically Integrated CMOS-circuitry
复制标题

DOI：
10.1109/sensor.1995.717295
复制
发表时间：
1995-06
期刊：
Proceedings of the International Solid-State Sensors and Actuators Conference - TRANSDUCERS '95
影响因子：
--
通讯作者：
H. Seidel;U. Fritsch;R. Gottinger;J. Schalk;J. Walter;K. Ambaum
H. Seidel;U. Fritsch;R. Gottinger;J. Schalk;J. Walter;K. Ambaum
中科院分区：
其他
文献类型：
--
作者：
H. Seidel;U. Fritsch;R. Gottinger;J. Schalk;J. Walter;K. Ambaum

文献摘要

被引文献

相似文献

研制了一种具有完整片上信号调理功能的压阻式硅加速度计。该传感器是一个三层的设备制造和键合完全在晶圆级。该电子电路的功能单元包括放大、温度漂移补偿和整个器件的自动调零失调补偿功能。结果表明，传感器的制造是兼容的CMOS工艺，它具有低成本高产量的工艺潜力。
A piezoresistive silicon accelerometer with complete on-chip signal conditioning for automotive applications was developed. The sensor is a three- layer device fabricated and bonded completely on a wafer scale. The functional units of the electronic circuit include amplification, temperature drift compensation, and an auto-zero offset compensation capability for the complete device. The results indicate that the sensor fabrication is compatible with a CMOS process and that it has the potential for a low-cost high yield process.