Nanoimprint and nanocontact technologies using hydrogen silsesquioxane
Nanoimprint and nanocontact technologies using hydrogen silsesquioxane
复制标题
使用氢倍半硅氧烷的纳米压印和纳米接触技术
DOI：
10.1116/1.1868695
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发表时间：
2005
影响因子：
1.4
通讯作者：
S. Matsui
中科院分区：
文献类型：
--
作者：
K. Nakamatsu;K. Watanabe;K. Tone;H. Namatsu;S. Matsui
使用氢倍半硅氧烷（HSQ）的室温纳米压印光刻（RT-NIL）和纳米接触印刷（RT-NCP）工艺是用于制造各种纳米结构器件的有前途的技术。我们已经评估了线宽依赖的HSQ压印深度和烘烤温度依赖的HSQ复制图案后RT-NIL。我们还展示了一种先进的双层抗蚀剂工艺，HSQ作为顶层，AZ光致抗蚀剂作为底层;该工艺可用于在Si衬底上制造RT-NIL和RT-NCP的高纵横比抗蚀剂图案。AZ光致抗蚀剂与HSQ的蚀刻速率比对于O2反应离子蚀刻超过100，这意味着HSQ顶层的蚀刻容限足以使其能够用作掩模。利用RT-NIL和RT-NCP分别制备了线宽100 nm、高1 μm和线宽150 nm、高1 μ m的高深宽纳米结构图形。此外，我们已经成功地将Au电极图案从模具转移到HSQ上。
Room-temperature nanoimprint lithography (RT-NIL) and nanocontact printing (RT-NCP) processes using hydrogen silsesquioxane (HSQ) are promising techniques for fabricating various nanostructure devices. We have evaluated the linewidth dependence of the HSQ imprinted depth and the baking-temperature dependence of HSQ replicated patterns after RT-NIL. We have also demonstrated an advanced bilayer resist process with HSQ as a top layer and AZ photoresist as a bottom layer; this process can be used to fabricate high-aspect resist patterns on a Si substrate for RT-NIL and RT-NCP. The etching-rate ratio of the AZ photoresist to HSQ exceeds 100 for O2 reactive-ion etching, which means the etching tolerance of the HSQ top layer is sufficient to enable its use as a mask. We have fabricated high-aspect nanostructure patterns with 100 nm linewidth and 1 μm height using RT-NIL and 150 nm linewidth and 1 μm height by using RT-NCP. Furthermore, we have successfully transferred Au electrode patterns from a mold onto HSQ ...