Chemical Properties of Oxidized Silicon Carbide Surfaces upon Etching in Hydrofluoric Acid
Chemical Properties of Oxidized Silicon Carbide Surfaces upon Etching in Hydrofluoric Acid
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DOI：
10.1021/ja9053465
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发表时间：
2009-11-25
影响因子：
15
通讯作者：
Feldman, Leonard C.
中科院分区：
文献类型：
--
作者：
Dhar, Sarit;Seitz, Oliver;Feldman, Leonard C.
氢氟酸中氧化硅的氢终止是由蚀刻工艺引起的，现在已经很好地理解和接受。该表面已成为表面科学研究的标准，也是微电子、能源和传感器应用中硅器件加工的重要组成部分。目前的工作表明，氧化碳化硅（SiC）的HF蚀刻导致一个非常不同的表面终止，无论表面是碳或硅终止。具体而言，碳化硅表面是亲水性的，具有羟基末端，这是由于HF无法去除氧化物/SiC界面处的最后一个氧层。最终的表面化学和稳定性主要取决于晶面和表面化学计量。这些表面性质影响表面化学功能化的能力，因此影响SiC如何用于生物医学应用。
Hydrogen termination of oxidized silicon in hydrofluoric acid results from an etching process that is now well understood and accepted. This surface has become a standard for studies of surface science and an important component in silicon device processing for microelectronics, energy, and sensor applications. The present work shows that HF etching of oxidized silicon carbide (SiC) leads to a very different surface termination, whether the surface is carbon or silicon terminated. Specifically, the silicon carbide surfaces are hydrophilic with hydroxyl termination, resulting from the inability of HF to remove the last oxygen layer at the oxide/SiC interface. The final surface chemistry and stability critically depend on the crystal face and surface stoichiometry. These surface properties affect the ability to chemically functionalize the surface and therefore impact how SiC can be used for biomedical applications.