Effect of emitter layer concentration on the performance of GaAs p/sup +/-i homojunction far-infrared detectors: a comparison of theory and experiment
Effect of emitter layer concentration on the performance of GaAs p/sup +/-i homojunction far-infrared detectors: a comparison of theory and experiment
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DOI：
10.1109/16.704362
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发表时间：
1998-08
影响因子：
3.1
通讯作者：
W. Shen;A. Perera;M. Francombe;H. Liu;M. Buchanan;W. Schaff
中科院分区：
文献类型：
--
作者：
W. Shen;A. Perera;M. Francombe;H. Liu;M. Buchanan;W. Schaff
研究了GaAs多层膜（p/sup +/-i-p/sup +/-i-...）报道了异质结界面功函数内光电发射（HIRF）远红外（FIR）探测器随发射层（p/sup +/）浓度的变化。暗电流特性进行了研究，并与一个模型，其中包括空间电荷，隧穿，和多重图像力效应进行了比较。实验确定的检测器截止波长被发现是在合理的协议与高密度（HD）理论。探测器的响应度遵循量子效率预测的自由载流子吸收系数与掺杂浓度的线性缩放。所有这些比较是必要的设计和优化GaAs HIRFIR探测器。
The performance of GaAs multilayer (p/sup +/-i-p/sup +/-i-...) homojunction interfacial workfunction internal photoemission (HIWIP) far-infrared (FIR) detectors as a function of emitter layer (p/sup +/) concentration is reported. The dark current characteristics have been investigated and compared with a model which includes the space charge, tunneling, and multiple-image-force effects. The experimentally determined detector cutoff wavelength is found to be in reasonable agreement with the high density (HD) theory. The detector responsivity follows well the quantum efficiency predicted by scaling the free carrier absorption coefficient linearly with the doping concentration. All these comparisons are necessary to design and optimize GaAs HIWIP FIR detectors.