Polymer nanocomposite spectrum down-convertors for UV sensing
Polymer nanocomposite spectrum down-convertors for UV sensing
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用于紫外传感的聚合物纳米复合光谱下变频器
DOI：
10.1117/12.2630722
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发表时间：
2022
期刊：
影响因子：
--
通讯作者：
Koplitz Brent
中科院分区：
文献类型：
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作者：
Darwish Abdalla M.;Sarkisov Sergey S.;Patel Darayas N.;Wilson Simeon;Jackson Rachel;Moody Nichols;Mele Paolo;Latronico Giovanna;Koplitz Brent
我们报告的聚合物纳米复合薄膜的光谱下转换性能，可以转移使用脉冲激光沉积（PLD）的硅雪崩光电二极管（APD）的响应和快速的紫外传感。所提出的光谱下转换器使用两种类型的纳米颗粒（NP）嵌入在无色聚酰亚胺基质中：半导体CdSe/ZnS核-壳量子点（QD）和由稀土（RE）掺杂的卤化铅钙钛矿CsPbX 3（X代表Br和Cl）制成的QD。这些NP具有将UV辐射有效下转换为可见光和近红外（NIR）光的能力，其与Si APD的光谱响应度匹配，光致发光量子产率（PLQY）为50%至190%。一旦APD检测到可见光/NIR信号，它的响应电子增益<106，响应时间约为10 ns，从而使快速和强大的UV传感成为可能。这两种类型的NP都具有很强的UV吸收，并且还保护APD免受UV辐射引起的降解。CdSe/ZnS核壳结构量子点的紫外光谱在631 nm处有一个红移峰。由于下转换或量子切割机制，掺杂有Yb 3+离子的钙钛矿量子点在近红外发射具有在980 nm处的峰值。这两种类型的纳米颗粒嵌入在聚合物基质和PLD沉积在透明基板上。我们描述了使用动态光散射，X射线衍射，光学光致发光光谱，和集成的下变频器的硅光电探测器的光伏特性的下变频器的表征结果。
We report on polymer nanocomposite films with spectrum down-converting properties that can be transferred using pulsed laser deposition (PLD) on silicon avalanche photodiodes (APD) for responsive and fast UV sensing. The proposed spectrum down-convertors use two types of nanoparticles (NPs) embedded in a colorless polyimide matrix: semiconductor CdSe/ZnS core-shell quantum dots (QDs) and the QDs made of rare-earth (RE) doped lead halide perovskites CsPbX3(X stands for Br and Cl). These NPs have efficient down-conversion of UV radiation into visible and near-infrared (NIR) light matching spectral responsivity of Si APD with the photoluminescence quantum yield (PLQY) from 50 to 190%. Once an APD detects visible/NIR signal, it responds with an electronic gain <106and a response time of ~10 ns thus making rapid and strong UV sensing possible. Both types of NPs have strong absorption of UV and additionally protect the APD from degradation caused by UV radiation. CdSe/ZnS core-shell QDs convert UV spectrum in visible with a red peak at 631 nm using the down-shifting mechanism. The perovskite QDs doped with the ion of Yb3+emitted in NIR with a peak at 980 nm due to the mechanism of down-conversion or quantum cutting. Both types of NPs were embedded in a polymer matrix and PLD deposited on a transparent substrate. We describe the results of characterization of the down-convertors using dynamic light scattering, X-ray diffraction, optical photoluminescence spectroscopy, and the photo-voltaic characteristics of silicon photodetectors integrated with the down-convertors.