Deep impurities in semiconductors. II. The optical cross section
Deep impurities in semiconductors. II. The optical cross section
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DOI：
10.1088/0022-3719/14/7/012
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发表时间：
1981-03
期刊：
影响因子：
--
通讯作者：
J. C. Inkson
中科院分区：
文献类型：
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作者：
J. C. Inkson
关于pt，见同上，第13卷，第3期，第359页(1980)。利用最近提出的半导体深陷阱模型的简化版本，得到了阈值附近的光学截面。研究发现，杂质和基质半导体能带结构的性质结合在一起，给出了四种基本的函数形式。这些理论截面在它们的函数形式上有很大的不同，从而允许实验上的区分，从而有可能提取所涉及的杂质的一些性质。
For pt.I see ibid., vol.13, no.3, p.359 (1980). A simplified version of a recent model for deep traps in semiconductors is used to derive the optical cross sections near threshold. It is found that the properties of the impurity and the host semiconductor band structure combine to give four basic functional forms. These theoretical cross sections are sufficiently different in their functional forms to allow an experimental distinction and hence the possibility of extracting some of the properties of the impurity involved.