Vertically Illuminated, Resonant Cavity Enhanced, Graphene-Silicon Schottky Photodetectors
Vertically Illuminated, Resonant Cavity Enhanced, Graphene-Silicon Schottky Photodetectors
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DOI：
10.1021/acsnano.7b04792
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发表时间：
2017-11-01
期刊：
影响因子：
17.1
通讯作者：
Ferrari, Andrea C.
中科院分区：
文献类型：
--
作者：
Casalino, Maurizio;Sassi, Ugo;Ferrari, Andrea C.
我们报告垂直照明，谐振腔增强，石墨烯硅肖特基光电探测器（PD）工作在1550 nm。这些利用石墨烯-Si界面处的内部光电发射。为了获得光谱选择性并增强响应度，PD与光学腔集成，从而在共振时产生多次反射，并增强石墨烯的吸收。我们得到了与波长相关的光响应，其外部（内部）响应度类似于20 mA/W（0.25A/W）。光谱选择性可以通过改变腔谐振波长来进一步调谐。我们的器件为开发用于光通信、相干光学断层扫描和光雷达的高响应度混合石墨烯-Si自由空间照明PD铺平了道路。
We report vertically illuminated, resonant cavity enhanced, graphene-Si Schottky photodetectors (PDs) operating at 1550 nm. These exploit internal photoemission at the graphene-Si interface. To obtain spectral selectivity and enhance responsivity, the PDs are integrated with an optical cavity, resulting in multiple reflections at resonance, and enhanced absorption in graphene. We get a wavelength-dependent photoresponse with external (internal) responsivity similar to 20 mA/W (0.25A/W). The spectral selectivity may be further tuned by varying the cavity resonant wavelength. Our devices pave the way for developing high responsivity hybrid graphene-Si free-space illuminated PDs for optical communications, coherence optical tomography, and light-radars.