Monte Carlo modeling of electron velocity overshoot effect in quantum well infrared photodetectors
Monte Carlo modeling of electron velocity overshoot effect in quantum well infrared photodetectors
复制标题
量子阱红外光电探测器中电子速度超调效应的蒙特卡罗建模
DOI：
10.1063/1.368499
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发表时间：
1998
期刊：
影响因子：
--
通讯作者：
M. Willander
中科院分区：
文献类型：
--
作者：
M. Ryzhii;V. Ryzhii;M. Willander
用系综蒙特卡罗粒子方法研究了n型AlGaAs/GaAs型和InP/InGaAs型量子阱红外探测器的暂态响应。结果表明，由超短红外辐射脉冲激发的光电流出现一个与电子速度过冲效应有关的尖峰。在太赫兹范围内，光电流峰值的存在导致了QwIP频率相关响应率的平台区。这种效应可用于太赫兹频率下QWIP混频器的外差检测和太赫兹辐射的产生。与具有AlGaAs势垒的QWIP相比，InP基QWIP具有更大的谷间距离和更明显的电子速度超调，从而导致前者在太赫兹光谱范围内具有更高的性能。
Transient response of n-type AlGaAs/GaAs and InP/InGaAs quantum well infrared photodetectors (QWIPs) has been studied using an ensemble Monte Carlo particle method. It has been shown that the photocurrent initiated by an ultrashort pulse of infrared radiation reveals a sharp peak associated with the electron velocity overshoot effect. The existence of the photocurrent peak results in a plateaulike region in the QWIP frequency-dependent responsivity in the terahertz range. This effect can be used for heterodyne detection in QWIP-based mixers at terahertz frequencies and for generation of terahertz radiation. Larger intervalley separation and, consequently, more pronounced electron velocity overshoot in InP-based QWIPs in comparison with QWIPs with AlGaAs barriers lead to higher performance of the former in the terahertz range of spectrum.