Characterization of thermal stresses of Cu/low-k submicron interconnect structures
Characterization of thermal stresses of Cu/low-k submicron interconnect structures
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Cu/低 k 亚微米互连结构的热应力表征
DOI：
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发表时间：
2001
期刊：
影响因子：
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通讯作者：
P. Ho
中科院分区：
文献类型：
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作者：
S. Rhee;Yong Du;P. Ho
采用X射线衍射方法研究了TEOS和低k（SiLK）钝化的Cu布线在热循环过程中的热应力特性。线与不同的纵横比进行了研究，并将结果进行了比较的Al/低k结构。Cu线的应力特性与Al线的应力特性有很大的不同，表明扩散势垒在控制Cu栅结构的应力行为中起着重要的作用。根据材料特性，定量分析了低k钝化和扩散阻挡层的影响。有限元分析进行了验证的X射线测量和结果确认的扩散势垒的作用，在Cu线的应力行为。
Thermal stress characteristics of damascene processed Cu lines passivated with TEOS and low-k (SiLK) were investigated using an X-ray diffraction method during thermal cycling. Lines with different aspect ratios were studied and the results were compared to that of an Al/low-k structure. The stress characteristics of Cu lines are quite different from those of Al lines, indicating that the diffusion barrier plays an important role in controlling the stress behavior of Cu damascene structures. The effect of low-k passivation and diffusion barrier were quantified according to materials properties. Finite element analysis was performed to verify the X-ray measurements and the results confirm the role of the diffusion barrier in stress behaviors of Cu lines.