Perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure
Perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure
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DOI：
10.1063/1.4736727
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发表时间：
2012-07-09
影响因子：
4
通讯作者：
Ohno, H.
中科院分区：
文献类型：
--
作者：
Sato, H.;Yamanouchi, M.;Ohno, H.
我们研究了具有由两个CoFeB - MgO界面（MgO/CoFeB（1.6纳米）/Ta（0.4纳米）/CoFeB（1.0纳米）/MgO）构成的记录结构的垂直CoFeB - MgO磁性隧道结（MTJ）。对于结尺寸为70纳米直径的这种结构的MTJ，其热稳定性因子比具有相同器件结构但只有单个CoFeB - MgO界面的垂直MTJ的最高值提高了1.9倍。另一方面，双界面和单界面MTJ的自旋转移矩切换的本征临界电流相当。（C）2012美国物理学会。[http://dx.doi.org/10.1063/1.4736727]
We investigated perpendicular CoFeB-MgO magnetic tunnel junctions (MTJs) with a recording structure consisting of two CoFeB-MgO interfaces, MgO/CoFeB (1.6 nm)/Ta (0.4 nm)/CoFeB (1.0 nm)/MgO. Thermal stability factor of MTJ with the structure having junction size of 70 nm phi was increased by a factor of 1.9 from the highest value of perpendicular MTJs with single CoFeB-MgO interface having the same device structure. On the other hand, intrinsic critical current for spin transfer torque switching of the double-and single-interface MTJs was comparable. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4736727]