Engineering the nanoscale morphology of a quantum dot-fullerene assembly via complementary hydrogen bonding interactions.

Engineering the nanoscale morphology of a quantum dot-fullerene assembly via complementary hydrogen bonding interactions.
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DOI：
10.1021/la4007372
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发表时间：
2013-03
期刊：
Langmuir : the ACS journal of surfaces and colloids
影响因子：
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通讯作者：
V. Nandwana;Luis A Serrano;K. M. Solntsev;Bernd Ebenhoch;Qian Liu;G. Y. Tonga;I. Samuel;G. Cooke;V. Rotello
V. Nandwana;Luis A Serrano;K. M. Solntsev;Bernd Ebenhoch;Qian Liu;G. Y. Tonga;I. Samuel;G. Cooke;V. Rotello
中科院分区：
其他
文献类型：
--
作者：
V. Nandwana;Luis A Serrano;K. M. Solntsev;Bernd Ebenhoch;Qian Liu;G. Y. Tonga;I. Samuel;G. Cooke;V. Rotello

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我们已经通过互补的三点氢键相互作用证明了CdSe量子点（QDs）和富勒烯（C60）衍生物之间的受控组装。识别介导的组装促进了互穿网络形态，从而有效地将电荷从QD转移到C60。
We have demonstrated controlled assembly between CdSe quantum dots (QDs) and a fullerene (C60) derivative via complementary three-point hydrogen bonding interactions. The recognition-mediated assembly facilitated an interpenetrated network morphology and hence efficient charge transfer from QD to C60.