Electron subbands and transport properties in inversion layers of InAs and InP.
Electron subbands and transport properties in inversion layers of InAs and InP.
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InAs 和 InP 反演层中的电子子带和传输特性。
DOI：
10.1103/physrevb.32.5280
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发表时间：
1985
期刊：
影响因子：
--
通讯作者：
Yamaguchi
中科院分区：
文献类型：
--
作者：
Yamaguchi
系统地研究了InAs和InP金属-绝缘体-半导体场效应晶体管二维反转层中的子带结构和电子输运。强磁场下电导率的混合量子振荡表明，InAs（受体浓度N = 1× 10 17 cm−3）和InP（受体浓度N = 1.7× 10 16 cm−3）分别在电子浓度N = 1.4× 10 12和3.8× 10 12 cm−2以上实现了双亚带导电状态。在低温下，双亚带导态开始时，观察到场效应迁移率突然下降。这种显著的效应是由于子带间散射。这些III-V型化合物的反相层中的电子迁移率也主要受到三种散射机制的限制：低N s值下带电界面态导致的屏蔽库仑散射，中间N s值下v族原子向外扩散导致的缺陷散射，以及高N s值下表面粗糙度散射。此外，由于二维体系的弱局部化效应，观察到负磁阻。由于自旋轨道相互作用与有效g因子的绝对值很大，在InAs中也观察到正磁电阻。最后，发现子带间散射对弱局域化有显著影响。
Subband structures and electron transport are systematically investigated in the two-dimensional inversion layers on InAs and InP metal-insulator-semiconductor field-effect transistors. Hybrid quantum oscillations of conductivity under a strong magnetic field reveal that the two-subband conduction state is realized above an electron concentration N s of 1.4× 10 12 and 3.8× 10 12 cm− 2 for InAs (acceptor concentration N A= 1× 10 17 cm− 3) and InP (N A= 1.7× 10 16 cm− 3), respectively. Field-effect mobility is observed to decrease abruptly at the onset of the two-subband conduction state at low temperatures. This remarkable effect is due to intersubband scattering. Electron mobility in inversion layers on these III-V compounds is also found to be limited mainly by three scattering mechanisms: screened Coulomb scattering due to the charged interface states at low N s values, defect scattering due to the out-diffusion of group-V atoms at intermediate N s values, and surface roughness scattering at high N s values. Additionally, negative magnetoresistance is observed due to the weak localization effect in the two-dimensional systems. Positive magnetoresistance is also observed in InAs, due to the spin-orbit interaction with a large absolute value of an effective g factor. Finally, intersubband scattering is found to give rise to a remarkable effect on the weak localization.