THEORY OF 2-DIMENSIONAL ELECTRON-HOLE LIQUIDS - APPLICATION TO LAYER-TYPE SEMICONDUCTORS
THEORY OF 2-DIMENSIONAL ELECTRON-HOLE LIQUIDS - APPLICATION TO LAYER-TYPE SEMICONDUCTORS
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DOI：
10.1143/jpsj.37.716
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发表时间：
1974-01-01
影响因子：
1.7
通讯作者：
KAMIMURA, H
中科院分区：
文献类型：
--
作者：
KURAMOTO, Y;KAMIMURA, H
利用哈伯德广义随机相位近似计算二维电子空穴金属液体的基态能量。处理以下两种情况来研究维数和多谷结构的影响：（i）具有单个极值的系统是导带和价带；（ii）导带中具有多谷结构的系统。结果表明，在情况（i）中，二维系统的基态能量比相应的三维系统大四倍，而在电子有效质量比空穴的有效质量轻的情况（ii）中，其基态能量变得大于四倍以上。指出了在高激发层型半导体中产生电子空穴饼的可能性。还推导了二维等离子体激元和声模的色散关系。
The ground state energy of two-dimensional electron-hole metallic liquid is calculated with use of the generalized random phase approximation of Hubbard. The following two cases are treated to investigate effects of dimensionality and many-valley structure: (i) the system with a single extremum is conduction and valence bands and (ii) the system with the many-valley structure in the conduction band. It is shown that the ground state energy of the two-dimensional system is four times larger than that of corresponding three-dimensional system in the case (i) while it becomes more than four times larger in the case (ii) where the effective mass of electrons is lighter than that of holes. A possibility of producing the electron-hole pancake in highly excited layer-type semiconductors is pointed out. The dispersion relations of two-dimensional plasmons and acoustic modes are also derived.