Formation of High-Quality Ohmic Contacts to p-GaN for Flip-Chip LEDs Using Ag ∕ TiN x ∕ Al
Formation of High-Quality Ohmic Contacts to p-GaN for Flip-Chip LEDs Using Ag ∕ TiN x ∕ Al
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DOI：
10.1149/1.1911999
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发表时间：
2005-06
影响因子：
--
通讯作者：
Dong‐Seok Leem;J. Maeng;D. Lee;T. Seong
中科院分区：
文献类型：
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作者：
Dong‐Seok Leem;J. Maeng;D. Lee;T. Seong
我们研究了用于GaN基倒装发光二极管的AgS2.5 NMD/TiNx S50 NMD/Al S200 NMD接触。在氮气气氛中430℃保温1min，Ag/TiNx/Al接触变为欧姆接触，比接触电阻为4.43 10−3V cm~2。结果表明，连续的银中间层在退火热处理过程中被分解成银纳米点。研究还表明，TiNx势垒层有效地阻碍了Al向GaN的内扩散。用退火态的Ag/TiNx/Al接触制备了蓝色LED，并与用退火态Ni/Au/Al接触制备的蓝光LED进行了比较。©2005电化学会。@doi：10.1149/1.1911999#版权所有。
We have investigated Ag s2.5 nmd/TiNx s50 nmd/Al s200 nmd contacts for use in GaN-based flip-chip light emitting diodes ~LEDs!. The Ag/TiNx/Al contact becomes ohmic with specific contact resistance of 4.4 3 10 −3 V cm2 when annealed at 430°C for 1 min in nitrogen ambient. It is shown that the continuous Ag interlayer is broken into Ag nanodots when annealed. It is also shown that the TiNx barrier layer effectively hampers the indiffusion of Al toward GaN. Blue LEDs are fabricated using the annealed Ag/TiNx/Al contacts and are compared with those made with the annealed Ni/Au/Al contacts. © 2005 The Electrochemical Society. @DOI: 10.1149/1.1911999# All rights reserved.