Combined photoluminescence-imaging and deep-level transient spectroscopy of recombination processes at stacking faults in 4H-SiC
Combined photoluminescence-imaging and deep-level transient spectroscopy of recombination processes at stacking faults in 4H-SiC
复制标题
4H-SiC 堆垛层错复合过程的光致发光成像和深能级瞬态光谱相结合
DOI：
10.1103/physrevb.74.233203
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发表时间：
2006
影响因子：
3.7
通讯作者：
P. Pirouz
中科院分区：
文献类型：
--
作者：
A. Galeckas;A. Hallén;S. Majdi;J. Linnros;P. Pirouz
我们报道了4H-碳化硅中单层和双层层错的电子性质，并对这些层错的复合增强缺陷反应的明显区别提供了洞察。光致发光成像光谱和深能级瞬变光谱实验揭示了辐射复合的关键成分，也提供了E-V+0.38 eV处的非辐射中心对复合增强的硅核部分位错迁移率负责的确凿证据。提出了一个全面的能级模型，可以定性地描述不同类型的层错和相应的束缚部分位错上的复合活动。
We report on electronic properties of single- and double-layer stacking faults in 4H-SiC and provide an insight into apparent distinctions of recombination-enhanced defect reactions at these faults. Photoluminescence imaging spectroscopy and deep-level transient spectroscopy experiments reveal key constituents of radiative recombination and also provide firm evidence of nonradiative centers at E-V+0.38 eV responsible for recombination-enhanced mobility of silicon-core partial dislocations. A comprehensive energy level model is proposed allowing for a qualitative description of recombination activity at different types of stacking faults and the corresponding bounding partial dislocations.