Structural Characterization of Femtosecond Laser Modified Regions Inside Sapphire
Structural Characterization of Femtosecond Laser Modified Regions Inside Sapphire
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DOI：
10.1166/jnn.2011.3919
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发表时间：
2011-04-01
影响因子：
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通讯作者：
Rode, Andrei
中科院分区：
文献类型：
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作者：
Juodkazis, Saulius;Kohara, Shinji;Rode, Andrei
我们报告的结构表征的蓝宝石photomified由亚波长直径的空隙包围的非晶区域曝光后形成的紧聚焦飞秒激光脉冲的波长为800 nm和150 fs的持续时间在单脉冲和双脉冲照射内的结晶蓝宝石。在双脉冲辐照位置的情况下，通过透射电子显微镜（TEM）观察到非晶相和结晶相之间的边缘附近的结晶相的再生长。利用同步辐射X射线衍射（XRD）技术对蓝宝石内部单脉冲诱导空洞图案化区域进行了表征。XRD图案表明存在主体晶体的膨胀相。在TEM和XRD中观察到的结构变化的起源进行了讨论，是一致的快速热淬火。
We report on structural characterization of sapphire photomodified by voids of sub-wavelength diameter surrounded by amorphised regions formed after exposure by tightly-focused femtosecond laser pulses of 800 nm wavelength and 150 fs duration at the single and double-pulse irradiation inside crystalline sapphire. Regrowth of a crystalline phase near the edge between the amorphous and crystalline phases was observed by transmission electron microscopy (TEM) in the case of double-pulse-irradiated locations. Regions patterned by single-pulse-induced voids inside sapphire were characterized by synchrotron X-ray diffraction (XRD) technique. The XRD patterns indicate presence of an expanded phase of the host crystal. The origin of structural changes observed in TEM and XRD is discussed and is consistent with fast thermal quenching.