Growth, structure and electrical properties of mercury indium telluride single crystals
Growth, structure and electrical properties of mercury indium telluride single crystals
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DOI：
10.1088/0022-3727/40/13/002
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发表时间：
2007-07
期刊：
影响因子：
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通讯作者：
Linghang Wang;Yangchun Dong;W. Jie
中科院分区：
文献类型：
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作者：
Linghang Wang;Yangchun Dong;W. Jie
采用垂直布里奇曼法生长了一种新的锌掺杂型光电晶体Hg（3−3x）In2xTe3（MIT）。通过X射线粉末衍射检查MIT（x = 0.5）晶体的结构。晶格常数为6.2934 ± 0.0011 Ω，属于缺陷型锌包层结构。通过使用差示扫描量热法测量MIT晶体的熔点。室温下的霍尔效应测量表明，MIT晶体的电阻率、载流子密度和迁移率分别为4.79 × 102 Ω cm、2.83 × 1013 cm−3和4.60 × 102 cm 2 V−1 s−1。计算了导带底部和价带顶部的电子有效质量。发现MIT晶体的费米能级比中间带隙的费米能级高约0.008eV。实验结果与理论计算结果吻合较好。
A new zinc-blende type photoelectronic single crystal, Hg(3−3x)In2xTe3 (MIT), was grown by using the vertical Bridgman method. The structure of the MIT (x = 0.5) crystal was examined by x-ray powder diffraction. The lattice parameters were determined to be 6.2934 ± 0.0011 Å with a defect zinc-blende structure, which belongs to the group . The melting point of the MIT crystal was measured by using the differential scanning calorimetry. Hall effect measurements on electrical properties at room temperature show that resistivity, carrier density and mobility of MIT crystal were 4.79 × 102 Ω cm, 2.83 × 1013 cm−3 and 4.60 × 102 cm2 V−1 s−1, respectively. The electron effective mass at the bottom of the conduction band and the top of the valence band was calculated. It was found that the Fermi level of the MIT crystal was about 0.008 eV higher than that of the mid-gap. The experimental carrier concentration was in good accordance with the theoretical result.