TlGaP Layers Grown on GaAs Substrates by Gas Source Molecular Beam Epitaxy
TlGaP Layers Grown on GaAs Substrates by Gas Source Molecular Beam Epitaxy
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通过气源分子束外延在 GaAs 衬底上生长 TlGaP 层
DOI：
10.1143/jjap.36.l665
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发表时间：
1997
期刊：
影响因子：
--
通讯作者：
Shunji Oe
中科院分区：
文献类型：
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作者：
Masahiro Fushida;H. Asahi;Kazuhiko Yamamoto;Hideki Koh;K. Asami;Shunji Oe
采用气源分子束外延的方法在GaAs衬底上生长TlGaP层。TlGaP是新型III-V化合物半导体TlInGaP的三元合金成分，该材料可用于0.9 μ m至10 μ m以上的激光二极管和温度不敏感波长的激光二极管。在GaAs上，TlGaP表现出三种稳定的相分离：与GaAs晶格匹配的TlGaP、类gap TlGaP和类tlp TlGaP。通过调节Tl和Ga的通量，生长出无相分离的TlGaP层。在TlGaP上的光导测量结果表明，在1.3µm波长区域有吸收，带隙能量的温度变化较小，与预期一致。
TlGaP layers are grown on GaAs substrates by gas source molecular beam epitaxy. TlGaP is a constituent ternary alloy of the new III–V compound semiconductor TlInGaP, a material which can be used for 0.9 µ m to over 10 µ m laser diodes and for temperature-insensitive-wavelength laser diodes. TlGaP on GaAs shows phase separation into three stable compositions: TlGaP nearly lattice-matched to GaAs, GaP-like TlGaP and TlP-like TlGaP. By adjusting Tl and Ga fluxes, TlGaP layers without phase separation are grown. Photoconductance measurement on TlGaP shows absorption in the 1.3 µ m wavelength region as well as the small temperature variation of band-gap energy, as expected.