Deposition of Ti2AlC and Ti3AlC2 epitaxial films by magnetron sputtering
Deposition of Ti2AlC and Ti3AlC2 epitaxial films by magnetron sputtering
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DOI：
10.1063/1.1780597
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发表时间：
2004-08
影响因子：
4
通讯作者：
O. Wilhelmsson;J. Palmquist;T. Nyberg;U. Jansson
中科院分区：
文献类型：
--
作者：
O. Wilhelmsson;J. Palmquist;T. Nyberg;U. Jansson
用直流磁控溅射法制备了Mn+1AXn相Ti_2AlC和Ti_3AlC_2薄膜。与Ti-Si-C系统一致，MAX相形核强烈依赖于温度。在900°C下生长Ti 2AlC和Ti 3AlC 2的外延膜，但在700°C下仅形成立方（Ti，Al）C相。此外，钙钛矿碳化物Ti 3AlC在800°C下生长。在900°C下沉积的Ti 3AlC 2、Ti 2AlC和Ti 3AlC薄膜的体电阻率分别为0.51μΩm、0.44μΩm和1.4μΩm。用纳米压痕法测得Ti_3AlC_2薄膜的硬度为20 GPa，杨氏模量为260 GPa。
Thin films of the Mn+1AXn-phases Ti2AlC and Ti3AlC2 have been deposited by dc magnetron sputtering. In agreement with the Ti–Si–C system, the MAX-phase nucleation is strongly temperature dependent. At 900°C epitaxial films of Ti2AlC and Ti3AlC2 were grown, but at 700°C only a cubic (Ti,Al)C phase was formed. In addition, a perovskite carbide, Ti3AlC was grown at 800°C. A bulk resistivity of 0.51μΩm, 0.44μΩm, and 1.4μΩm was measured for the Ti3AlC2, Ti2AlC, and Ti3AlC films deposited at 900°C, respectively. By nanoindentation the hardness and Young’s module was determined for an epitaxial Ti3AlC2 film to 20GPa and 260GPa, respectively.