Structure dependent hydrogen induced etching features of graphene crystals
Structure dependent hydrogen induced etching features of graphene crystals
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DOI：
10.1063/1.4922991
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发表时间：
2015-06
影响因子：
4
通讯作者：
A. Thangaraja;S. Shinde;G. Kalita;Remi Papon;Subash Sharma;R. Vishwakarma;K. Sharma;M. Tanemura
中科院分区：
文献类型：
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作者：
A. Thangaraja;S. Shinde;G. Kalita;Remi Papon;Subash Sharma;R. Vishwakarma;K. Sharma;M. Tanemura
氢气诱导石墨烯蚀刻对于了解石墨烯生长过程以及制造纳米带和各种其他结构具有重要意义。在这里，我们展示了石墨烯晶体结构依赖的 H2 诱导蚀刻行为。我们通过常压化学气相沉积工艺在电抛光铜箔上合成了石墨烯晶体，其中一些晶体呈现六边形雪花树枝状形态。通过在氢气和氩气的混合气体中退火，观察到雪花枝晶和规则石墨烯晶体在氢气诱导的蚀刻行为方面存在显着差异。规则的石墨烯晶体被各向异性蚀刻，形成具有明显边缘的六边形孔，而所有树突晶体的蚀刻都是从叶的分支发生的，形成对称的分形结构。蚀刻行为为石墨烯成核和生长以及选择性蚀刻以制造纳米电子学的明确结构提供了重要线索。
H2 induced etching of graphene is of significant interest to understand graphene growth process as well as to fabricate nanoribbons and various other structures. Here, we demonstrate the structure dependent H2 induced etching behavior of graphene crystals. We synthesized graphene crystals on electro-polished Cu foil by an atmospheric pressure chemical vapor deposition process, where some of the crystals showed hexagonal shaped snowflake-dendritic morphology. Significant differences in H2 induced etching behavior were observed for the snowflake-dendritic and regular graphene crystals by annealing in a gas mixture of H2 and Ar. The regular graphene crystals were etched anisotropically creating hexagonal holes with pronounced edges, while etching of all the dendritic crystals occurred from the branches of lobs creating symmetrical fractal structures. The etching behavior provides important clue of graphene nucleation and growth as well as their selective etching to fabricate well-defined structures for nanoelectronics.