Electrical properties of polyimides for interlevel isolation and active device gate isolation
Electrical properties of polyimides for interlevel isolation and active device gate isolation
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用于层间隔离和有源器件栅极隔离的聚酰亚胺的电性能
DOI：
10.1109/vmic.1989.77999
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发表时间：
1989
期刊：
影响因子：
--
通讯作者：
D. Lile
中科院分区：
文献类型：
--
作者：
A. Dubey;D. Lile
本文报告了在聚酰亚胺薄层上进行的一系列对比实验的结果，聚酰亚胺薄层的厚度约为600A到-gt；1.5微米，其中含有有意引入和控制的钠。钠的水平从未使用兴奋剂(<；0.2 p.p.m)不等。至下午200点在起始股中。用I/V和C/V测量方法对这些薄膜进行了表征。尽管最好的聚酰亚胺薄膜的电阻率约为10/sup 16/欧姆-厘米，但作者认为，对于栅极隔离，聚酰亚胺介质中的Na/sup+/污染水平需要低于0.2p.p.m。设备运行稳定。
A report is presented on the results of a comparative series of experiments conducted on thin polyimide layers, of thicknesses in the range approximately 600 A to >1.5 mu m, containing intentionally introduced and controlled amounts of Na. The levels of Na ranged from undoped (<0.2 p.p.m.) to 200 p.p.m. in the starting stock. These films were characterized using I/V and C/V measurements on MIS structures fabricated on Si wafers. Although the very best PI films has resistivities of approximately 10/sup 16/ Omega -cm the authors feel that, for use for gate isolation, the Na/sup +/ contamination level in the polyimide dielectric would need to be less than 0.2 p.p.m. for stable device operation.<<ETX>>