Fe-catalytic growth of ZnSe nanowires on a ZnSe(001) surface at low temperatures by molecular-beam epitaxy
Fe-catalytic growth of ZnSe nanowires on a ZnSe(001) surface at low temperatures by molecular-beam epitaxy
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DOI：
10.1063/1.1997275
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发表时间：
2005-07
影响因子：
4
通讯作者：
Y. Ohno;T. Shirahama;S. Takeda;A. Ishizumi;Y. Kanemitsu
中科院分区：
文献类型：
--
作者：
Y. Ohno;T. Shirahama;S. Takeda;A. Ishizumi;Y. Kanemitsu
我们使用 Fe 催化剂，通过在 250-350 °C 低温下操作的分子束外延，在 ZnSe∕GaAs 外延层上生长了 ZnSe 针状纳米线，该温度与制造基于 ZnSe 的光电器件的常用温度相当。纳米线顶部的直径范围为 8 至 20 nm，典型长度约为 200 nm。纳米线的数密度约为109cm−2。纳米线为闪锌矿结构，纵向为⟨001⟩、⟨111⟩、⟨110⟩或⟨112⟩。光致发光光谱表明纳米线的光学性质与块状晶体的光学性质不同。
We grew ZnSe needle-like nanowires on a ZnSe∕GaAs epilayer using Fe catalysts by means of molecular-beam epitaxy operated at low temperatures of 250–350 °C, which are comparable to the usual temperatures for fabrication of ZnSe-based optoelectronic devices. The diameters at the tops of the nanowires ranged from 8 to 20 nm, and the typical length was about 200 nm. The number density of the nanowires was the order of 109cm−2. A nanowire was the zinc blende structure and the longitudinal direction was ⟨001⟩,⟨111⟩,⟨110⟩, or ⟨112⟩. Photoluminescence spectroscopy implied that the optical property of the nanowires differs from that of the bulk crystals.