Doped contacts for high-longevity optically activated, high gain GaAs photoconductive semiconductor switches
Doped contacts for high-longevity optically activated, high gain GaAs photoconductive semiconductor switches
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DOI：
10.1109/27.901223
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发表时间：
1999-06
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影响因子：
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通讯作者：
Alan Mar;G. Loubriel;F. Zutavern;M. O’Malley;W. Helgeson;D. J. Brown;H. Hjalmarson;Albert G. Baca;R. L. Thornton;R. D. Donaldson
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文献类型：
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作者：
Alan Mar;G. Loubriel;F. Zutavern;M. O’Malley;W. Helgeson;D. J. Brown;H. Hjalmarson;Albert G. Baca;R. L. Thornton;R. D. Donaldson
高增益GaAs光电导开关（PCSS）的寿命已延长到5000万脉冲以上。这是通过在PCSS接触下面引入掺杂层来改善欧姆接触而实现的，掺杂层在抑制细丝形成和减轻电流拥挤以改善PCSS的寿命方面非常有效。现在，在比以前高得多的电流水平下，几乎可以实现无损伤操作，预期寿命几乎无限。开关的固有无损伤电流容量取决于掺杂层的厚度，并且对于4 /spl μ/m的掺杂剂扩散深度至少为100 A。接触金属具有不同的损伤机制，并且损伤阈值（/spl sim/40 A）没有进一步提高超过约2 /spl mu/m的掺杂剂扩散深度。在扩散掺杂接触开关中，当发生接触金属腐蚀时，开关性能不会降低。本文比较了热扩散和外延生长作为接触掺杂的方法。这些技术的制造问题和设备特性方面的对比。
The longevity of high gain GaAs photoconductive semiconductor switches (PCSS) has been extended to over 50 million pulses. This was achieved by improving the ohmic contacts through the incorporation of a doped layer beneath the PCSS contacts which is very effective in the suppression of filament formation and alleviating current crowding to improve the longevity of PCSS. Damage-free operation is now possible with virtually infinite expected lifetime at much higher current levels than before. The inherent damage-free current capacity of the switch depends on the thickness of the doped layers and is at least 100 A for a dopant diffusion depth of 4 /spl mu/m. The contact metal has a different damage mechanism and the threshold for damage (/spl sim/40 A) is not further improved beyond a dopant diffusion depth of about 2 /spl mu/m. In a diffusion-doped contact switch, the switching performance is not degraded when contact metal erosion occurs. This paper compares thermal diffusion and epitaxial growth as approaches to doping the contacts. These techniques are contrasted in terms of the fabrication issues and device characteristics.