g -factor engineering with InAsSb alloys toward zero band gap limit
g -factor engineering with InAsSb alloys toward zero band gap limit
复制标题
DOI：
10.1103/physrevb.108.l121201
复制
发表时间：
2023-09
影响因子：
3.7
通讯作者：
Yuxuan Jiang;M. Ermolaev;S. Moon;G. Kipshidze;G. Belenky;Stefan Svensson;M. Ozerov;Dmitry Smirnov;Zhigang Jiang;S. Suchalkin
中科院分区：
文献类型：
--
作者：
Yuxuan Jiang;M. Ermolaev;S. Moon;G. Kipshidze;G. Belenky;Stefan Svensson;M. Ozerov;Dmitry Smirnov;Zhigang Jiang;S. Suchalkin
带隙被认为是半导体中调节Lande $g$-因子的有效参数，并且可以通过三元合金中的弯曲效应在很宽的范围内进行操纵。在这项工作中，使用最近开发的虚拟衬底技术，高品质的InAsSb合金在整个Sb成分范围内制造和大的$g$-因子为$g\approx-90 $在最小带隙为$\sim 0.1$ eV，对零隙极限的进一步分析揭示了一个可能的巨大的g因子，约为-200具有一种特殊的相对论塞曼效应，这种效应随着磁场的平方根而分散。这样的$g$-因子增强对窄的间隙限制不能定量描述的传统的罗斯公式，作为轨道之间的相互作用效应的近三倍退化带成为塞曼分裂的主要来源。这些结果可能为在半导体和拓扑材料中实现大g$因子和自旋极化态提供新的见解。
Band gap is known as an effective parameter for tuning the Lande $g$-factor in semiconductors and can be manipulated in a wide range through the bowing effect in ternary alloys. In this work, using the recently developed virtual substrate technique, high-quality InAsSb alloys throughout the whole Sb composition range are fabricated and a large $g$-factor of $g\approx -90$ at the minimum band gap of $\sim 0.1$ eV, which is almost twice that in bulk InSb is found. Further analysis to the zero gap limit reveals a possible gigantic $g$-factor of $g\approx -200$ with a peculiar relativistic Zeeman effect that disperses as the square root of magnetic field. Such a $g$-factor enhancement toward the narrow gap limit cannot be quantitatively described by the conventional Roth formula, as the orbital interaction effect between the nearly triply degenerated bands becomes the dominant source for the Zeeman splitting. These results may provide new insights into realizing large $g$-factors and spin polarized states in semiconductors and topological materials.