MOVPE growth of InN: a comparison between a horizontal and a vertical reactor
MOVPE growth of InN: a comparison between a horizontal and a vertical reactor
复制标题
InN 的 MOVPE 生长：卧式和立式反应器之间的比较
DOI：
10.1002/pssc.200880914
复制
发表时间：
2009
期刊：
影响因子：
--
通讯作者：
T. Matsuoka
中科院分区：
文献类型：
--
作者：
Yuhuai Liu;Takeshi Kimura;Taka;Masaki Hirata;M. Wakaba;M. Nakao;Shichao Ji;T. Matsuoka
比较了用卧式反应器和立式反应器MOVPE生长InN的情况。相图几乎不依赖于反应器的结构，而是取决于参数，如V/III比和生长温度。与立式反应器相比，卧式反应器中InN的生长速率显著增加，这是由于停滞层厚度的减小、对衬底表面的源供应的增加以及通过缩窄流动通道获得的高浓度源气体。对于卧式反应器，在低载气流量下出现多晶相，在高载气流量下消失。这些数据表明，增加载气流速可以抑制气相反应。在卧式反应器的情况下，InN可以在高达625 °C的温度下获得，而立式反应器中的最高生长温度为575 °C。但在600 °C以上，生长速率显著降低。（© 2009 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆）
The MOVPE growth of InN by a horizontal reactor is compared with that by a vertical reactor. The phase diagram does not almost depend on the reactor structure, but rather the parameters such as V/III ratio and the growth temperature. The growth rate of InN in the horizontal reactor significantly increases in comparison with the vertical reactor due to the reduction of the stagnant layer thickness, the increases in the source supply to the substrate surface and the high concentration of source gases by narrowing flow channel. For the horizontal reactor, the polycrystalline phase appeared in the case of the low carrier-gas flow-rate and disappeared for the high carrier-gas flow-rate. These data suggest that increasing the carrier gas flow rate can suppress the gas phase reactions. In the case of the horizontal reactor, InN can be obtained at temperatures as high as 625 °C, compared with the maximum growth temperature of 575 °C in the vertical reactor. But the growth rates significantly decrease above 600 °C. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)