The Subtle Structure Modulation of A2-A1-D-A1-A2 Type Nonfullerene Acceptors Extends the Photoelectric Response for High-Voltage Organic Photovoltaic Cells
The Subtle Structure Modulation of A2-A1-D-A1-A2 Type Nonfullerene Acceptors Extends the Photoelectric Response for High-Voltage Organic Photovoltaic Cells
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A 2 –A 1 –D –A 1 –A 2 型非富勒烯受体的精细结构调制延长了高压有机光伏电池的光电响应
DOI：
10.1002/marc.202100810
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发表时间：
2022-02-07
影响因子：
4.6
通讯作者：
Zhou, Erjun
中科院分区：
文献类型：
--
作者：
Dai, Tingting;Tang, Ailing;Zhou, Erjun
利用分子结构修饰来提高高压有机光致变色材料（OPV）的短路电流（J（SC））。本文中，选择经典的非富勒烯受体（NFA）BTA 3作为基准，其中BTA 3b在中间核上含有线性烷基链，而JC 14在苯并三唑（BTA）单元上稠合噻吩作为对比。基于J52-F：BTA 3b和J52-F：JC 14的光伏器件实现了比基于J52-F：BTA 3（715 nm）的器件更宽的外量子效率响应，其带边分别为730和800 nm。与BTA 3（11.56 mA cm（-2））相比，相应的J（SC）分别增加至14.08和15.78 mA cm（-2）。较小的Urbach能量和较高的电致发光效率保证了J52-F：JC 14降低了能量损失最后，J52-F：JC 14组合实现了比J52-F：BTA 3b的功率转换效率（PCE）提高10.33%的功率转换效率（PCE（PCE = 9.81%）和J52-F：BTA 3（PCE = 9.04%）。总体而言，研究结果表明，NFA的细微结构修饰，特别是引入稠环，是一种简单有效的策略，可以扩展光电响应，提高J（SC）并确保超过1.0 V的高V-OC。
Molecular structural modifications are utilized to improve the short-circuit current (J(SC)) of high-voltage organic photovoltaics (OPVs). Herein, the classic non-fullerene acceptor (NFA), BTA3, is chosen as a benchmark, with BTA3b containing the linear alkyl chains on the middle core and JC14 fusing thiophene on the benzotriazole (BTA) unit as a contrast. The photovoltaic devices based on J52-F: BTA3b and J52-F: JC14 achieve wider external quantum efficiency responses with band edges of 730 and 800 nm, respectively than that of the device based on J52-F: BTA3 (715 nm). The corresponding J(SC) increases to 14.08 and 15.78 mA cm(-2), respectively, compared to BTA3 (11.56 mA cm(-2)). The smaller Urbach energy and higher electroluminescence efficiency guarantee J52-F: JC14 a decreased energy loss (0.528 eV) and a high open-circuit voltage (V-OC) of 1.07 V. Finally, J52-F: JC14 combination achieves an increased power conversion efficiency (PCE) of 10.33% than that of J52-F: BTA3b (PCE = 9.81%) and J52-F: BTA3 (PCE = 9.04%). Overall, the research results indicate that subtle structure modification of NFAs, especially introducing fused rings, is a simple and effective strategy to extend the photoelectric response, boosting the J(SC) and ensuring a high V-OC beyond 1.0 V.