Anomalous photoluminescence behavior from amorphous Ge quantum dots produced by buffer-layer-assisted growth
Anomalous photoluminescence behavior from amorphous Ge quantum dots produced by buffer-layer-assisted growth
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DOI：
10.1063/1.2426892
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发表时间：
2007-01
影响因子：
4
通讯作者：
A. Bhatti;V. N. Antonov;P. Swaminathan;J. S. Palmer;J. H. Weaver
中科院分区：
文献类型：
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作者：
A. Bhatti;V. N. Antonov;P. Swaminathan;J. S. Palmer;J. H. Weaver
作者提出了光致发光的结果，从非晶锗量子点形成的缓冲层辅助生长。其尺寸、形状和密度通过改变掺杂缓冲层的厚度来控制，尺寸从2nm到8nm变化。在0.3K和0.91eV处观察到一个相对较弱的信号，该信号与尺寸无关，并且对激光强度不敏感。它的温度依赖的幅度表现出Berthelot型的行为，他们与辐射尾态和浅无辐射态之间的载流子跳跃。这些发现类似于多孔半导体。
The authors present photoluminescence results from amorphous Ge quantum dots formed using buffer-layer-assisted growth. Their sizes, shapes, and densities were controlled by varying the thickness of the Xe buffer layer, with sizes varying from 2to8nm. A relatively weak signal was observed at ∼3K at ∼0.91eV that was independent of size and was insensitive to laser intensity. Its temperature-dependent magnitude showed a Berthelot-type behavior that they associate with hopping of carriers between radiative tail states and shallow nonradiative states. These findings are similar to those from porous semiconductors.