Electron Spin-relaxation Dynamics in GaAs/AlGaAs Quantum Wells and InGaAs/InP Quantum Wells
Electron Spin-relaxation Dynamics in GaAs/AlGaAs Quantum Wells and InGaAs/InP Quantum Wells
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DOI：
10.1143/jjap.38.4680
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发表时间：
1999-08
影响因子：
1.5
通讯作者：
A. Tackeuchi;T. Kuroda;ShunichiMuto Nishikawa;OsamuWada OsamuWada-OsamuWada
中科院分区：
文献类型：
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作者：
A. Tackeuchi;T. Kuroda;ShunichiMuto Nishikawa;OsamuWada OsamuWada-OsamuWada
我们研究了室温下未掺杂的 GaAs/AlGaAs 多量子阱 (MQW) 和 InGaAs/InP MQW 中电子的自旋弛豫过程。使用时间分辨自旋相关泵和探针吸收测量来测量不同井厚度的自旋弛豫时间。根据 τs∝E1e-2.2，GaAs MQW 的自旋弛豫时间 τs 取决于电子限制能 E1e，这表明室温下主要的自旋弛豫机制是 D'yakonov-Perel' 过程。带隙约为 GaAs MQW 一半的 InGaAs MQW 的测量自旋弛豫时间约为 5 ps，并且根据量子限制能 E1e 变化，根据 τs∝E1e-1.0。 Elliott-Yafet 过程的自旋弛豫时间对于较窄带隙材料变得更强，针对量子阱进行了计算，并显示其根据 τs∝E1e-1 变化。讨论了自旋弛豫机制以及使用这种快速自旋弛豫过程的可能应用。
We have investigated the spin-relaxation process of electrons at room temperature in undoped GaAs/AlGaAs multiple-quantum wells (MQWs) and InGaAs/InP MQWs. The spin-relaxation times are measured for different well thicknesses using time-resolved spin-dependent pump and probe absorption measurement. The spin-relaxation time, τs, for GaAs MQWs was found to depend on the electron confinement energy, E1e, according to τs∝E1e-2.2, demonstrating that the main spin-relaxation mechanism at room temperature is the D'yakonov-Perel' process. The measured spin-relaxation times of InGaAs MQWs whose band-gap is about half that of GaAs MQWs are about 5 ps and vary depending on the quantum confinement energy, E1e, according to τs∝E1e-1.0. The spin-relaxation time by Elliott-Yafet process, which becomes stronger for narrower band-gap materials, is calculated for quantum wells and shown to vary according to τs∝E1e-1. The spin-relaxation mechanism and possible applications using this fast spin-relaxation process are discussed.