Reduction of threshold voltage fluctuation in field-effect transistors by controlling individual dopant position
Reduction of threshold voltage fluctuation in field-effect transistors by controlling individual dopant position
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DOI：
10.1063/1.4733289
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发表时间：
2012-07
影响因子：
4
通讯作者：
M. Hori;K. Taira;Akira Komatsubara;K. Kumagai;Y. Ono;T. Tanii;T. Endoh;T. Shinada
中科院分区：
文献类型：
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作者：
M. Hori;K. Taira;Akira Komatsubara;K. Kumagai;Y. Ono;T. Tanii;T. Endoh;T. Shinada
为了研究纳米级场效应晶体管中掺杂剂位置对阈值电压（Vth）的影响，我们制作了具有有序掺杂剂阵列和常规随机沟道掺杂的晶体管。电测量结果表明，器件性能可以通过单独控制掺杂剂的位置，尽管根据泊松分布改变掺杂剂的数量，以提高。此外，由于减少了投射离子的挣扎，通过注入较重的离子如砷，可以抑制Vth的器件到器件的波动。我们的研究结果突出了通过控制单个掺杂剂位置来改善器件性能的潜力。
To investigate the impact of only the dopant position on threshold voltage (Vth) in nanoscale field-effect transistors, we fabricated transistors with ordered dopant arrays and conventional random channel doping. Electrical measurements revealed that device performance could be enhanced by controlling the dopant position alone, despite varying dopant number according to a Poisson distribution. Furthermore, device-to-device fluctuations in Vth could be suppressed by implanting a heavier ion such as arsenic owing to the reduction of the projected ion struggling. The results of our study highlight potential improvements in device performance by controlling individual dopant positions.