Influence of electron irradiation on electroluminescence of Cu(In,Ga)Se2 solar cells
Influence of electron irradiation on electroluminescence of Cu(In,Ga)Se2 solar cells
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电子辐照对Cu(In,Ga)Se2太阳能电池电致发光的影响
DOI:
10.7567/jjap.53.05fw08
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发表时间:
2014
期刊:
影响因子:
--
通讯作者:
H. Kusawake
中科院分区:
文献类型:
--
作者:
S. Kawakita;M. Imaizumi;S. Ishizuka;H. Shibata;S. Niki;S. Okuda;H. Kusawake
Cu(In,Ga)Se2 (CIGS) solar cells were irradiated with 250 keV electrons, which can create only Cu-related defects in the cells, to reveal created radiation defects. The electron irradiation increased electroluminescence (EL) emission intensity from the CIGS cells with similar behavior to light soaking. A hundred keV electrons also increased the EL intensity without producing displacement defects. Both the 100 and 250 keV electrons increased the effective acceptor density and improved cell performance. Since these phenomena have been reported as a light-soaking effect for CIGS solar cells, electron radiation effects with less than 250 keV for CIGS solar cells are thought to be equivalent to the light-soaking effect.
DOI:
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发表时间:
2022
期刊:
影响因子:
--
作者:
Jiro Nishinaga;Manabu Togawa;Shogo Ishizuka,
通讯作者:
Shogo Ishizuka,
DOI:
--
发表时间:
2008
期刊:
Jpn.J.Appl.Phys. Vol.47,No.2
影响因子:
--
作者:
Cho;Y.-H.;Kina;A.;Shimada;T.;Hayashi;T.;K. Yoshida
通讯作者:
K. Yoshida